參數(shù)資料
型號(hào)： AO4706
廠商： ALPHA
英文描述： 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A)
中文描述： N溝道增強(qiáng)模式場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 488K
代理商： AO4706
AO4706
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
V
DS
=30V, V
GS
=0V
0.02
10
0.1
20
0.1
2.4
T
J
=125°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
V
A
Gate Threshold Voltage
On state drain current
1.5
100
1.85
5.6
8.4
6.8
112
0.37
6.8
10.5
8.2
T
J
=125°C
m
S
V
A
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
0.5
5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
4000
520
217
0.6
5000
pF
pF
pF
0.9
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
59
27
12
11
9
9
37
8
17
21
77
35
nC
nC
nC
nC
ns
ns
ns
ns
20
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Total Gate Charge
Total Gate Charge
Gate Source Charge
V
GS
=10V, V
DS
=15V, I
D
=17A
Gate Drain Charge
Turn-On DelayTime
V
GS
=0V, V
DS
=15V, f=1MHz
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.9
,
R
GEN
=3
m
V
GS
=4.5V, I
D
=15A
V
DS
=5V, I
D
=16.5A
I
S
=1A,V
GS
=0V
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=16.5A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
Zero Gate Voltage Drain Current
mA
V
DS
=0V, V
GS
= ±12V
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=16.5A, dI/dt=300A/
μ
s
I
D
=1mA, V
GS
=0V
I
F
=16.5A, dI/dt=300A/
μ
s
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev1: June 2007
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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