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參數(shù)資料
| 型號(hào)： | AO4702L |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | N溝道增強(qiáng)模式場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 117K |
| 代理商： | AO4702L |
AO4702
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
0.007
0.05
3.2
12
10
20
100
3
I
GSS
V
GS(th)
I
D(ON)
nA
V
A
1
40
1.8
13.4
16.8
20
25
0.45
16
21
25
T
J
=125°C
m
g
FS
V
SD
I
S
S
V
A
0.5
5
C
iss
C
oss
C
rss
R
g
1040
212
121
0.7
1250
pF
pF
pF
0.85
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
19.8
9.8
2.5
3.5
4.5
3.9
17.4
3.2
19
9
24
12
nC
nC
nC
nC
ns
ns
ns
ns
7
7
30
5.7
23
11
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Output Capacitance (FET+Schottky)
Reverse Transfer Capacitance
Body Diode + Schottky Reverse Recovery Charge
I
F
=11A, dI/dt=100A/
μ
s
On state drain current
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=11A
I
F
=11A, dI/dt=100A/
μ
s
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate resistance
I
DSS
mA
Gate Threshold Voltage
Body Diode + Schottky Reverse Recovery Time
V
GS
=0V, V
DS
=0V, f=1MHz
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250
μ
A
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Zero Gate Voltage Drain Current
(Set by Schottky leakage)
Gate-Body leakage current
I
D
=250
μ
A, V
GS
=0V
V
R
=30V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode + Schottky Forward Voltage
m
V
GS
=4.5V, I
D
=8A
V
DS
=5V, I
D
=11A
I
S
=1A,V
GS
=0V
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=11A
Total Gate Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
V
GS
=10V, V
DS
=15V, R
L
=1.35
,
R
GEN
=3
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 5: Aug 2005
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
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| AO4703 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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| AO4704 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4704L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4705 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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