參數(shù)資料
型號: AO4703
廠商: ALPHA
英文描述: P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述: P通道增強(qiáng)模式場的肖特基二極管晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 225K
代理商: AO4703
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
Pulsed Forward Current
B
R
θ
JA
40
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
10s
R
θ
JA
Steady-State
75
75
30
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Steady-State
21
-55 to 150
Typ
Maximum Junction-to-Ambient
A
Steady-State
Continuous Forward Current
A
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
t
10s
Parameter
Drain-Source Voltage
-55 to 150
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
P
D
I
D
4.4
3.2
30
3
2.1
A
Continuous Drain Current
A
Pulsed Drain Current
B
Schottky reverse voltage
Gate-Source Voltage
Schottky
I
F
40
28
54
Max
°C/W
°C/W
MOSFET
-30
±25
-12
-10
-60
3
Junction and Storage Temperature Range
W
30
2.1
Power Dissipation
AO4703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -30V
I
D
= -12A (V
GS
=
-
20V)
R
DS(ON)
< 14m
(V
GS
=
-
20V)
R
DS(ON)
< 15m
(V
GS
=
-
10V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO4703 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters.
Standard Product AO4703 is Pb-free
(meets ROHS & Sony 259 specifications). AO4703L
is a Green Product ordering option. AO4703 and
AO4703L are electrically identical.
G
D
S
A
K
G
S
S
A
D/K
D/K
D/K
D/K
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
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