參數資料
型號: AO4702L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述: N溝道增強模式場效應晶體管肖特基二極管
文件頁數: 1/5頁
文件大?。?/td> 117K
代理商: AO4702L
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
W
2
2
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
3
3
A
3.2
Pulsed Diode Forward Current
B
30
Schottky reverse voltage
30
4.4
Continuous Forward Current
A
I
F
A
9.3
Pulsed Drain Current
B
50
Continuous Drain Current
A
I
D
11
Gate-Source Voltage
±20
Drain-Source Voltage
30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
MOSFET
Schottky
AO4702
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 11A (V
GS
= 10V)
R
DS(ON)
< 16m
(V
GS
= 10V)
R
DS(ON)
< 25m
(V
GS
= 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
General Description
The AO4702 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky Diode is
packaged in parallel to improve device performance in
synchronous recitification applications, or H-bridge
configurations.
Standard Product AO4702 is Pb-free
(meets ROHS & Sony 259 specifications). AO4702L is a
Green Product ordering option. AO4702and AO4702L are
electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
A
K
Alpha & Omega Semiconductor, Ltd.
相關PDF資料
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AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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