參數(shù)資料
型號(hào): AO4702L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述: N溝道增強(qiáng)模式場(chǎng)效應(yīng)晶體管肖特基二極管
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 117K
代理商: AO4702L
AO4702
Symbol
Typ
31
59
16
Max
40
75
24
R
θ
JL
Symbol
Typ
36
67
25
Max
40
75
30
R
θ
JL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Junction-to-Lead
C
Steady-State
°C/W
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
Thermal Characteristics: Schottky
Thermal Characteristics: MOSFET
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop,
capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 5 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
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