參數(shù)資料
型號(hào)： AO4700
廠商： ALPHA
英文描述： N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述： N溝道增強(qiáng)模式場(chǎng)效應(yīng)晶體管肖特基二極管
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 127K
代理商： AO4700
AO4700
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
1.9
20
22.5
31.3
34.5
15.4
0.76
28
38
42
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
10
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
680
102
77
3
pF
pF
pF
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.45
0.07
0.5
0.15
V
4.2
15
120
20
60
C
T
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
mA
V
R
=24V, T
J
=125°C
V
R
=24V, T
J
=150°C
V
R
=15V
Junction Capacitance
I
F
=3.0A
V
R
=24V
I
rm
Maximum reverse leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
V
GS
=10V, V
DS
=15V, I
D
=6.9A
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
DS
=5V, I
D
=6.9A
I
S
=1A
V
GS
=0V, V
DS
=15V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6.9A
m
V
GS
=4.5V, I
D
=5.0A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
DS
=24V, V
GS
=0V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±20V
I
F
=6.9A, dI/dt=100A/
μ
s
I
F
=6.9A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
Rev 3 : Sept 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
相關(guān)PDF資料
PDF描述
AO4700L N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4702L N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4700L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4701 功能描述:MOSFET P-CH -30V -5A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
AO4702 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4702L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4703 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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