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參數(shù)資料
| 型號： | AO4700 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | N溝道增強模式場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 127K |
| 代理商： | AO4700 |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
110
40
Maximum Junction-to-Lead
C
Steady-State
31
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
44
62.5
°C/W
Steady-State
73
62.5
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
74
35
110
40
Steady-State
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
48
Parameter: Thermal Characteristics MOSFET
Typ
Max
W
1.28
1.28
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
2
2
A
2.6
40
Pulsed Forward Current
B
Schottky reverse voltage
30
4
Continuous Forward Current
A
I
F
A
5.8
30
Pulsed Drain Current
B
Gate-Source Voltage
±20
6.9
Continuous Drain Current
A
I
D
Parameter
Drain-Source Voltage
MOSFET
30
Schottky
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AO4700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 28m
(V
GS
= 10V)
R
DS(ON)
< 42m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 4A, V
F
<0.5V@3A
General Description
The AO4700 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for non-synchronous DC-DC conversion
applications.
Standard Product AO4700 is Pb-free (meets
ROHS & Sony 259 specifications). AO4700L is a Green
Product ordering option. AO4700 and AO4700L are
electrically identical.
G
S
A
A
D
D
K
K
1
2
3
4
8
7
6
5
SOIC-8
A
K
G
D
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4700L | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4701 | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4702L | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4702 | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4703 | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4700L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4701 | 功能描述:MOSFET P-CH -30V -5A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4702 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4702L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4703 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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