參數(shù)資料
型號： AO4620
廠商： ALPHA
英文描述： Complementary Enhancement Mode Field Effect Transistor
中文描述： 增強(qiáng)模式互補(bǔ)場效應(yīng)晶體管
文件頁數(shù)： 4/7頁
文件大?。?/td> 142K
代理商： AO4620
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONE0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
0
2
4
6
8
10
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
200
400
600
800
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.001
5
10
15
20
25
30
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
C
oss
C
rss
V
DS
=15V
I
D
=7.2A
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=100°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
0.0
0.1
1.0
10.0
100.0
0.01
0.1
1
10
100
V
DS
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
μ
s
10ms
1ms
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100
μ
s
0.1s
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO4621 Complementary Enhancement Mode Field Effect Transistor
AO4622 Complementary Enhancement Mode Field Effect Transistor
AO4624 Complementary Enhancement Mode Field Effect Transistor
AO4625 Complementary Enhancement Mode Field Effect Transistor
AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4620_12 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4621 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4622 功能描述:MOSFET N/P-CH COMPL 20V 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AO4622_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual P N-Channel MOSFET
AO4624 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
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