參數(shù)資料
型號： AO4620
廠商： ALPHA
英文描述： Complementary Enhancement Mode Field Effect Transistor
中文描述： 增強模式互補場效應(yīng)晶體管
文件頁數(shù)： 1/7頁
文件大?。?/td> 142K
代理商： AO4620
Symbol
V
DS
V
GS
Max p-channel
-30
±20
-5.3
Units
V
V
I
DM
I
AR
E
AR
T
J
, T
STG
A
mJ
°C
Symbol
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
50
80
32
50
80
32
Max
62.5
100
40
62.5
100
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
R
θ
JL
R
θ
JL
Repetitive avalanche energy 0.3mH
B
Junction and Storage Temperature Range
25
43
Maximum Junction-to-Lead
C
Steady-State
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
t
≤
10s
Steady-State
Steady-State
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
R
θ
JA
30
±20
7.2
6.2
30
2
1.44
13
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
F
Pulsed Drain Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
W
-4.5
-30
2
1.44
17
A
T
A
=25°C
T
A
=70°C
I
D
-55 to 150
-55 to 150
T
A
=70°C
Power Dissipation
F
Avalanche Current
B
T
A
=25°C
P
D
AO4620
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.2A (V
GS
=10V) -5.3A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 24m
(V
GS
=10V) < 38m
(V
GS
= -10V)
< 36m
(V
GS
=4.5V) < 60m
(V
GS
= -4.5V)
General Description
The AO4620 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications.
Standard
Product AO4620 is Pb-free (meets ROHS
& Sony 259 specifications).
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
n-channel
p-channel
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相關(guān)PDF資料
PDF描述
AO4621 Complementary Enhancement Mode Field Effect Transistor
AO4622 Complementary Enhancement Mode Field Effect Transistor
AO4624 Complementary Enhancement Mode Field Effect Transistor
AO4625 Complementary Enhancement Mode Field Effect Transistor
AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4620_12 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4621 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4622 功能描述:MOSFET N/P-CH COMPL 20V 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AO4622_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual P N-Channel MOSFET
AO4624 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
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