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參數(shù)資料
| 型號： | AO4616L |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 156K |
| 代理商： | AO4616L |
AO4616
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
ID
(ON)
100
3
nA
V
A
1
30
1.8
16.4
20
23.4
23
0.75
20
25
28
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
1040
180
110
0.7
1250
pF
pF
pF
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
19.2
9.36
2.6
4.2
5.2
4.4
17.3
3.3
16.7
6.7
nC
nC
nC
nC
ns
ns
ns
ns
21
10
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
I
S
=1A
V
GS
=10V, I
D
=8.1A
Body-Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, I
D
=8.1A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
V
GS
=4.5V, I
D
=6A
V
DS
=5V, I
D
=8.1A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±20V
Drain-Source Breakdown Voltage
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
N-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body-Diode Reverse Recovery Charge
I
F
=8.1A, dI/dt=100A/
μ
s
Body-Diode Reverse Recovery Time
I
F
=8.1A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve provides
a single pulse rating.
Rev 0 : July 2005
Alpha Omega Semiconductor, Ltd.
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| AO4616L_102 | 功能描述:MOSFET N/P-CH 30V 8A/7A 8-SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:N 和 P 溝道 FET 功能:邏輯電平門 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A，7A 不同?Id，Vgs 時的?Rds On（最大值）:20 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時的輸入電容（Ciss）:888pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4617 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4618 | 功能描述:MOSFET N/P-CH 40V 8/7A 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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| AO4619L | 制造商:AOS 功能描述:MOSFET |
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