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參數(shù)資料
| 型號： | AO4619 |
| 廠商： | ALPHA |
| 英文描述： | Diode; Antenna switching; VR (V): 60; IF (mA): 50; Pd (mW): 150; rf (ohm) max: 1.8; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 0.9; Condition IF at VF (mA): 2; C (pF) max: 0.45; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP |
| 中文描述： | 增強模式互補場效應晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 155K |
| 代理商： | AO4619 |
Symbol
V
DS
V
GS
Max p-channel
-30
±20
Units
V
V
I
DM
I
AR
E
AR
T
J
, T
STG
A
mJ
°C
Symbol
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
50
82
41
50
82
41
Max
62.5
110
50
62.5
110
50
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
R
θ
JL
R
θ
JL
11
18
25
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Avalanche Current
B
Repetitive avalanche energy 0.3mH
B
13
T
A
=70°C
Power Dissipation
A
T
A
=25°C
P
D
A
Continuous Drain
Current
F
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
I
D
-25
2
1.3
W
7.4
6
35
2
1.3
-4.2
-5.2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Max n-channel
30
±20
t
≤
10s
Steady-State
Steady-State
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
A
Steady-State
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
R
θ
JA
AO4619
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.4A (V
GS
=10V) -5.2A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 24m
(V
GS
=10V) < 48m
(V
GS
= -10V)
< 36m
(V
GS
=4.5V) < 74m
(V
GS
= -4.5V)
General Description
The AO4619 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications.
Standard
Product AO4619 is Pb-free (meets ROHS
& Sony 259 specifications).
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
n-channel
p-channel
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相關PDF資料 |
PDF描述 |
|---|---|
| AO4620 | Complementary Enhancement Mode Field Effect Transistor |
| AO4621 | Complementary Enhancement Mode Field Effect Transistor |
| AO4622 | Complementary Enhancement Mode Field Effect Transistor |
| AO4624 | Complementary Enhancement Mode Field Effect Transistor |
| AO4625 | Complementary Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AO4619L | 制造商:AOS 功能描述:MOSFET |
| AO4620 | 功能描述:MOSFET N/P-CH COMPL 30V 8-SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4620_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4621 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4622 | 功能描述:MOSFET N/P-CH COMPL 20V 8-SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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