參數(shù)資料
型號(hào): AO4619
廠商: ALPHA
英文描述: Diode; Antenna switching; VR (V): 60; IF (mA): 50; Pd (mW): 150; rf (ohm) max: 1.8; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 0.9; Condition IF at VF (mA): 2; C (pF) max: 0.45; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP
中文描述: 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 6/7頁(yè)
文件大小: 155K
代理商: AO4619
AO4619
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
F
=-6.5A, dI/dt=100A/
μ
s
6
THIS PR80
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIO40
25°C
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
-
D
-4V
-4.5V
-10V
0
2
4
6
8
10
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-
D
(
25°C
125°C
V
DS
=-5V
20
40
60
80
100
0
2
4
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
V
GS
=-4.5V
V
GS
=-10V
1E-06
1E-05
1E-04
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-
S
25°C
125°C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
N
20
60
100
120
140
160
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
)
I
D
=-5.2A
125°C
-5V
V
GS
=-3.5V
-8V
V
GS
=-10V
I
D
=-5.2A
V
GS
=-4.5V
I
D
=-4A
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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