- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375332 > AO4601 (ALPHA) Complementary Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AO4601 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 311K |
| 代理商： | AO4601 |
AO4601
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1.7
40
-2.5
16
20.5
15
33
21
-0.75
19
25
18
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
16
S
V
A
-1
-2.6
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2076
503
302
2
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005
39
8
11.4
12.7
7
25.2
12
32
26
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
p-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=-20V, I
D
=-8A
V
GS
=-4.5V, I
D
=-5A
V
DS
=-5V, I
D
=-8A
I
S
=-1A,V
GS
=0V
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
V
GS
=-10V, V
DS
=-15V, R
L
=1.8
,
R
GEN
=3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-8A, dI/dt=100A/
μ
s
I
F
=-8A, dI/dt=100A/
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4601L | Complementary Enhancement Mode Field Effect Transistor |
| AO4604 | Complementary Enhancement Mode Field Effect Transistor |
| AO4606 | LJT 55C 55#22D PIN RECP |
| AO4607 | Complementary Enhancement Mode Field Effect Transistor |
| AO4607L | Complementary Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4601L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4603 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4603L | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4604 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4604_09 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。