參數(shù)資料
型號: AO4607L
廠商: ALPHA
英文描述: Complementary Enhancement Mode Field Effect Transistor
中文描述: 增強模式互補場效應晶體管
文件頁數(shù): 1/8頁
文件大小: 203K
代理商: AO4607L
Symbol
V
DS
V
GS
Max p-channel
-30
±20
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
DM
T
J
, T
STG
W
T
A
=70°C
1.28
Junction and Storage Temperature Range
-55 to 150
°C
Pulsed Diode Forward Current
B
20
2
Power Dissipation
A
T
A
=25°C
P
D
30
±20
6.9
5.8
30
2
1.28
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
W
-5
-30
-6
2
1.28
A
T
A
=25°C
T
A
=70°C
I
D
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
P
D
Reverse Voltage
Continuous Forward
Current
A
30
3
2
V
T
A
=25°C
T
A
=70°C
I
D
A
Parameter
Maximum Schottky
Units
-55 to 150
-55 to 150
AO4607
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.9A (V
GS
=10V) -6A (V
GS
=1
-
0V)
R
DS(ON)
R
DS(ON)
< 28m
(V
GS
=10V) < 35m
(V
GS
=
-
10V)
< 42m
(V
GS
=4.5V) < 58m
(V
GS
=
-
4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
General Description
The AO4607 uses advanced trench
technology MOSFETs to provide excellen
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in inverter and other applications. A
Schottky diode is co-packaged with the n-
channel FET to minimize body diode
losses.
AO4607 is Pb-free (meets ROHS
& Sony 259 specifications). AO4607L is
a Green Product ordering option.
AO4607 and AO4607L are electrically
identical.
G1
S1
G2
S2/A
D1
D1
D2/K
D2/K
1
2
3
4
8
7
6
5
SOIC-8
G
D
S
n-channel
p-channel
G
D
S2
K
A
Alpha & Omega Semiconductor, Ltd.
相關PDF資料
PDF描述
AO4610 Complementary Enhancement Mode Field Effect Transistor
AO4610L Complementary Enhancement Mode Field Effect Transistor
AO4611 Complementary Enhancement Mode Field Effect Transistor
AO4611L Complementary Enhancement Mode Field Effect Transistor
AO4612 Complementary Enhancement Mode Field Effect Transistor
相關代理商/技術參數(shù)
參數(shù)描述
AO4609 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4609L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4610 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4610L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4611 功能描述:MOSFET N+P 60V 6.3A/4.9A 8SOIC RoHS:是 類別:分離式半導體產品 >> FET - 陣列 系列:- 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道(雙) FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR