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參數(shù)資料
| 型號(hào)： | AO4607L |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 203K |
| 代理商： | AO4607L |
Symbol
V
DS
V
GS
Max p-channel
-30
±20
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
DM
T
J
, T
STG
W
T
A
=70°C
1.28
Junction and Storage Temperature Range
-55 to 150
°C
Pulsed Diode Forward Current
B
20
2
Power Dissipation
A
T
A
=25°C
P
D
30
±20
6.9
5.8
30
2
1.28
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
W
-5
-30
-6
2
1.28
A
T
A
=25°C
T
A
=70°C
I
D
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
P
D
Reverse Voltage
Continuous Forward
Current
A
30
3
2
V
T
A
=25°C
T
A
=70°C
I
D
A
Parameter
Maximum Schottky
Units
-55 to 150
-55 to 150
AO4607
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.9A (V
GS
=10V) -6A (V
GS
=1
-
0V)
R
DS(ON)
R
DS(ON)
< 28m
(V
GS
=10V) < 35m
(V
GS
=
-
10V)
< 42m
(V
GS
=4.5V) < 58m
(V
GS
=
-
4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
General Description
The AO4607 uses advanced trench
technology MOSFETs to provide excellen
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in inverter and other applications. A
Schottky diode is co-packaged with the n-
channel FET to minimize body diode
losses.
AO4607 is Pb-free (meets ROHS
& Sony 259 specifications). AO4607L is
a Green Product ordering option.
AO4607 and AO4607L are electrically
identical.
G1
S1
G2
S2/A
D1
D1
D2/K
D2/K
1
2
3
4
8
7
6
5
SOIC-8
G
D
S
n-channel
p-channel
G
D
S2
K
A
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AO4609 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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| AO4611 | 功能描述:MOSFET N+P 60V 6.3A/4.9A 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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