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參數(shù)資料
| 型號： | AO4610 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 215K |
| 代理商： | AO4610 |
Symbol
V
DS
V
GS
Max p-channel
-30
±20
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
DM
T
J
, T
STG
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
Current
A
Pulsed Forward Current
B
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
Units
V
-55 to 150
-55 to 150
T
A
=25°C
T
A
=70°C
I
D
A
T
A
=70°C
Power Dissipation
T
A
=25°C
P
D
A
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
I
D
-30
2
1.28
W
8.5
6.6
30
2
1.28
-5.6
-7.1
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Max n-channel
30
±20
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
D
W
°C
AO4610
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 8.5A(V
GS
=10V) -7.1A(V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 18m
(V
GS
=10V) < 25m
(V
GS
= -10V)
< 28m
(V
GS
=4.5V) < 40m
(V
GS
= -4.5V)
V
F
<0.5V@1A
General Description
The AO4610 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. A Schottky
diode is co-packaged with the n-channel FET
to minimize body diode losses.
Standard
Product AO4610 is Pb-free (meets ROHS &
Sony 259 specifications). AO4610L is a
Green Product ordering option. AO4610
and AO4610L are electrically identical.
G1
S1
G2
S2/A
D1
D1
D2/K
D2/K
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
n-channel
p-channel
G2
D2
S2
K
A
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4610L | Complementary Enhancement Mode Field Effect Transistor |
| AO4611 | Complementary Enhancement Mode Field Effect Transistor |
| AO4611L | Complementary Enhancement Mode Field Effect Transistor |
| AO4612 | Complementary Enhancement Mode Field Effect Transistor |
| AO4612L | Complementary Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4610L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4611 | 功能描述:MOSFET N+P 60V 6.3A/4.9A 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4611_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:60V Dual P N-Channel MOSFET |
| AO4611L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4612 | 功能描述:MOSFET N/P-CH COMPL 60V 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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