參數(shù)資料
型號: AO4612L
廠商: ALPHA
英文描述: Complementary Enhancement Mode Field Effect Transistor
中文描述: 增強模式互補場效應晶體管
文件頁數(shù): 1/7頁
文件大?。?/td> 144K
代理商: AO4612L
Symbol
V
DS
V
GS
Max p-channel
-60
±20
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
60
62.5
110
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
R
θ
JL
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
10s
Steady-State
R
θ
JA
-20
2
1.28
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
T
A
=25°C
P
D
Steady-State
Steady-State
A
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
I
D
W
4.5
3.6
20
2
1.28
-2.6
-3.2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Max n-channel
60
±20
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
t
10s
R
θ
JA
AO4612
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 60V -60V
I
D
= 4.5A (V
GS
=10V) -3.2A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 56m
(V
GS
=10V) < 105m
(V
GS
= -10V)
< 77m
(V
GS
=4.5V) < 135m
(V
GS
= -4.5V)
General Description
The AO4612 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.
Standard product AO4612 is
Pb-free (meets ROHS & Sony 259
specifications). AO4612L is a Green
Product ordering option. AO4612 and
AO4612L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
相關PDF資料
PDF描述
AO4613 Complementary Enhancement Mode Field Effect Transistor
AO4613L Complementary Enhancement Mode Field Effect Transistor
AO4614 Complementary Enhancement Mode Field Effect Transistor
AO4614L Complementary Enhancement Mode Field Effect Transistor
AO4615 Complementary Enhancement Mode Field Effect Transistor
相關代理商/技術參數(shù)
參數(shù)描述
AO4613 功能描述:MOSFET N/P-CH 30V 7.2/6.1A 8SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道(雙) FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AO4613_001 功能描述:MOSFET N/P-CH 30V 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷(TR) 零件狀態(tài):過期 FET 類型:N 和 P 溝道 FET 功能:邏輯電平門 漏源極電壓(Vdss):30V 電流 - 連續(xù)漏極(Id)(25°C 時):- 不同?Id,Vgs 時的?Rds On(最大值):24 毫歐 @ 7.2A,10V 不同 Id 時的 Vgs(th)(最大值):3V @ 250μA 不同 Vgs 時的柵極電荷(Qg):15nC @ 10V 不同 Vds 時的輸入電容(Ciss):630pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商器件封裝:8-SO 標準包裝:1
AO4613_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual P N-Channel MOSFET
AO4613L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4614 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor