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參數(shù)資料
| 型號： | AO4612L |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強模式互補場效應(yīng)晶體管 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 144K |
| 代理商： | AO4612L |
AO4612
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-60
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-20
-2.1
84
145
106
9
-0.73
105
T
J
=125°C
135
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
S
V
A
-1
-3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
930
85
35
7.2
1120
pF
pF
pF
9
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
16
8
2.5
3.2
8
3.8
31.5
7.5
27
32
20
10
nC
nC
nC
nC
ns
ns
ns
ns
12
7.5
48
15
35
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev2: August 2005
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-3.2A, dI/dt=100A/
μ
s
I
F
=-3.2A, dI/dt=100A/
μ
s
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-30V, R
L
=9.4
,
R
GEN
=3
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-30V, I
D
=-3.2A
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=-30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3.2A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-3.2A
m
V
GS
=-4.5V, I
D
=-2.8A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±20V
Drain-Source Breakdown Voltage
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-48V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
Rev2: August 2005
SOA curve provides a single pulse rating.
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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