參數(shù)資料
型號: AO4601
廠商: ALPHA
英文描述: Complementary Enhancement Mode Field Effect Transistor
中文描述: 增強模式互補場效應(yīng)晶體管
文件頁數(shù): 1/7頁
文件大?。?/td> 311K
代理商: AO4601
Symbol
V
DS
V
GS
Max p-channel
-30
±25
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
52
78
48
50
73
31
Max
62.5
110
60
62.5
110
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
R
θ
JL
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
10s
Steady-State
R
θ
JA
-50
2
1.44
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
P
D
Steady-State
Steady-State
A
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
I
D
W
4.7
4
30
2
1.44
-6.9
-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Max n-channel
30
±12
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
t
10s
R
θ
JA
AO4601
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 4.7A
(V
GS
=10V)
-8A
(V
GS
= -20V)
R
DS(ON)
R
DS(ON)
< 55m
(V
GS
=10V) < 18m
(V
GS
=
-
20V)
< 70m
(V
GS
=4.5V) < 19m
(V
GS
=
-
10V)
< 110m
(V
GS
= 2.5V)
General Description
The AO4601 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications.
Standard
Product AO4601 is Pb-free (meets ROHS & Sony
259 specifications). AO4601L is a Green Product
ordering option. AO4601 and AO4601L are
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
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