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參數(shù)資料
| 型號(hào)： | AO4600 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 274K |
| 代理商： | AO4600 |
AO4600
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-1.4
nA
V
A
-0.7
-25
-1
42.5
49
74
64
120
T
J
=125°C
54
80
11
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7
S
V
A
-0.75
-1
-3
C
iss
C
oss
C
rss
R
g
952
103
77
5.9
1200
pF
pF
pF
30
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
9.5
2
3.1
12
4
37
12
21
13
12
nC
nC
nC
ns
ns
ns
ns
26
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
.
p-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-5A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
V
DS
=-5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-15V, I
D
=-5A
V
GS
=-10V, V
DS
=-15V, R
L
=3
,
R
GEN
=6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
μ
s
I
F
=-5A, dI/dt=100A/
μ
s
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still ≤
≤
10s thermal resistance
is the sum of the thermal impedence from junction to lead R
s pulses, duty cycle 0.5% max.
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
A: The value of R
10s thermal resistan=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
B: Repetitive rating, pulse width limited by junction temperature.
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
C. The R
μ
D. The static characteristics in Figures 1 to 6,12,14 are obtain FR-4 boards pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
Rev 4 : Sept 2005
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
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