參數(shù)資料
型號(hào): AM50DL128CG85IT
廠(chǎng)商: ADVANCED MICRO DEVICES INC
元件分類(lèi): 存儲(chǔ)器
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA88
封裝: 11.60 X 8 MM, FBGA-88
文件頁(yè)數(shù): 51/63頁(yè)
文件大?。?/td> 464K
代理商: AM50DL128CG85IT
50
Am50DL128CG
November 7, 2002
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
3. CE#f refers to active flash device being addressed (either CE#f1 or CE#f2).
Parameter
Speed
JEDEC
Std
Description
70
85
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
85
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
40
45
ns
t
DVEH
t
DS
Data Setup Time
Min
40
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE#f Pulse Width
Min
40
45
ns
t
EHEL
t
CPH
CE#f Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation
(Note 2)
Byte
Typ
5
μs
Word
Typ
7
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
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