參數(shù)資料
型號: AM50DL128CG85IS
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲器
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA88
封裝: 11.60 X 8 MM, FBGA-88
文件頁數(shù): 52/63頁
文件大小: 464K
代理商: AM50DL128CG85IS
November 7, 2002
Am50DL128CG
51
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#f
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SADD for sector erase
555 for chip erase
t
BUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SADD = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must
be held high during this operation.
5. Waveforms are for the word mode.
Figure 26.
Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings
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