參數(shù)資料
型號(hào): AM42DL6404G85IS
廠商: SPANSION LLC
元件分類(lèi): 存儲(chǔ)器
英文描述: Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 8 X 11.60 MM, FBGA-73
文件頁(yè)數(shù): 37/61頁(yè)
文件大小: 567K
代理商: AM42DL6404G85IS
36
Am42DL6404G
March 20, 2002
P R E L I M I N A R Y
SRAM DC AND OPERATING CHARACTERISTICS
Notes:
1. If the pulse width is
20 ns, the undershoot will be
2.0 V.
2. If the pulse width is
20 ns, the overshoot will be V
CC
+2.0 V.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
I
IO
= 0 mA, CE1#s = V
IL
, CE2s =
WE# = V
IH
, V
IN
= V
IH
or V
IL
Cycle time = 1 μs, 100% duty,
I
= 0 mA, CE1#s
0.2 V,
CE2
V
CC
0.2 V, V
IN
0.2 V or
V
IN
V
CC
0.2 V
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
I
OL
= 2.1 mA
I
OH
=
1.0 mA
CE1#s = V
IH
,
CE2 = V
IL
, Other
inputs = V
IH
or V
IL
CE1#s
V
CC
0.2 V, CE2
V
CC
0.2 V (CE1#s controlled) or CE2
0.2 V (CE2s controlled), CIOs =
V
SS
or V
CC
, Other input = 0 ~ V
CC
1.0
1.0
μA
I
LO
Output Leakage Current
1.0
1.0
μA
I
CC
Operating Power Supply Current
3
mA
I
CC1
s
Average Operating Current
3
mA
I
CC2
s
Average Operating Current
22
mA
V
OL
V
OH
Output Low Voltage
0.4
V
Output High Voltage
2.4
V
I
SB
Standby Current (TTL)
0.3
mA
I
SB1
Standby Current (CMOS)
10
μA
V
IL
Input Low Voltage
0.2
(Note 1)
0.6
V
V
IH
Input High Voltage
2.2
V
CC
+
0.2
(Note 2)
V
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