參數(shù)資料
型號: AM42DL6402G
英文描述: 150NS, SOIC, IND TEMP(EEPROM)
中文描述: 64兆位(8米x8Bit/4M x16Bit)閃存和SRAM(初步)
文件頁數(shù): 55/60頁
文件大?。?/td> 956K
代理商: AM42DL6402G
54
Am42DL16x2D
March 4, 2002
P R E L I M I N A R Y
AC CHARACTERISTICS
Notes:
1. CE1#s controlled, if CIOs is low, ignore UB#s and LB#s timing.
1. t
CW
is measured from CE1#s going low to the end of write.
2. t
WR
is measured from the end of write to the address change. t
WR
applied in case a write ends as CE1#s or WE# going high.
3. t
AS
is measured from the address valid to the beginning of write.
4. A write occurs during the overlap (t
WP
) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP
is measured from the beginning of write
to the end of write.
Figure 31.
SRAM Write Cycle—CE1#s Control
Address
Data Valid
UB#s, LB#s
WE#
Data In
Data Out
High-Z
High-Z
t
WC
CE1#s
CE2s
t
AW
t
AS
(See Note 2 )
t
BW
t
(See Note 3)
t
WR
(See Note 4)
t
WP
(See Note 5)
t
DW
t
DH
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