參數(shù)資料
型號(hào)： AM42SERIES
英文描述： GaAs MMIC VSAT Power Amplifier， 2W， 5.9-6.4 GHz
中文描述： 砷化鎵微波單片集成電路甚小孔徑終端功放，2W的，5月9日至六月四號(hào)吉赫
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 40K
代理商： AM42SERIES
GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
AM42-0040
M/A-COM Division of AMP Incorporated
I
North America: Tel. (800) 366-2266, Fax (800) 618-8883
I
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
I
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Ordering Information
Part Number
AM42-0040
Package
Ceramic Bolt Down Package
Electrical Specifications:
T
A
= +25°C, V
DD
= +9V, V
GG
adjusted for I
DD
= 1050 mA, Frequency = 5.9 to 6.4 GHz
Parameter
Abbv.
Test Conditions
Linear Gain
G
L
P
IN
≤
-10 dBm
Input VSWR
VSWR
IN
P
IN
≤
-10 dBm
Output VSWR
VSWR
OUT
P
IN
≤
-10 dBm
Output Power
P
SAT
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Output Power vs. Frequency
P
SAT
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Output Power vs. Temperature
(with respect to T
A
=+25°C)
T
A
= -40°C to +70°C
Drain Bias Current
I
DD
P
IN
=
+10 dBm
Gate Bias Voltage
V
GG
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Gate Bias Current
Ι
GG
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Thermal Resistance
θ
JC
25°C Heat Sink
Second Harmonic
f
2
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Third Harmonic
f
3
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Units
dB
—
—
dBm
dB
dB
Min.
27
—
—
31.7
—
—
Typ.
30
2.3:1
3.0:1
33.0
1.0
±0.4
Max.
—
2.7:1
—
34.3
1.5
—
P
SAT
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
mA
V
mA
°C/W
dBc
dBc
900
-2.4
—
—
—
—
1050
-1.2
5
5.6
-35
-45
1100
-0.4
20
—
—
—
CR-15
Features
High Linear Gain: 30 dB Typ.
High Saturated Output Power: +33 dBm Typ.
High Power Added Efficiency: 26% Typ.
50
Input/Output Broadband Matched
High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0040 is a three-stage MMIC power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0040 employs an internally matched monolithic chip
with internally decoupled Gate and Drain bias networks. The
AM42-0040 is designed to be operated from a constant current
Drain supply. By varying the Gate bias voltage, the saturated
output power performance of this device can be tailored for
various applications.
The AM42-0040 is designed for use as an output stage or
driver amplifier for C-band VSAT transmitter systems. This
amplifier employs a fully monolithic chip and requires a
minimum of external components.
M/A-COM’s AM42-0040 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full chip
passivation for increased performance and reliability. These
amplifiers are 100% RF tested to ensure compliance to
performance specifications.
GaAs MMIC VSAT Power Amplifier, 2W
5.9 - 6.4 GHz
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = ± 0.005
.XX = ± 0.010
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