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參數(shù)資料
| 型號(hào)： | AM41PDS3228DT11IT |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA73 |
| 封裝： | 8 X 11.60 MM, FBGA-73 |
| 文件頁(yè)數(shù)： | 49/59頁(yè) |
| 文件大小： | 560K |
| 代理商： | AM41PDS3228DT11IT |
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48
Am41PDS3228D
May 13, 2002
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
Parameter
Speed Options
Unit
JEDEC
Std
Description
10
11
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
110
ns
t
AVWL
t
AS
Address Setup Time (WE# to Address)
Min
0
ns
t
ASO
Address Setup Time to CE#f Low During Toggle
Bit Polling
Min
15
ns
t
ELAX
t
AH
Address Hold Time
Min
60
ns
t
AHT
Address Hold time from CE#f or OE# High During
Toggle Bit Polling
Min
0
ns
t
DVEH
t
DS
Data Setup Time
Min
60
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE#f Pulse Width
Min
60
ns
t
EHEL
t
CPH
CE#f Pulse Width High
Min
60
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
16
μs
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
5
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
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