參數(shù)資料
型號(hào)： AM41PDS3228DT11IT
廠商： ADVANCED MICRO DEVICES INC
元件分類： 存儲(chǔ)器
英文描述： 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 8 X 11.60 MM, FBGA-73
文件頁數(shù)： 12/59頁
文件大?。?/td> 560K
代理商： AM41PDS3228DT11IT
May 13, 2002
Am41PDS3228D
11
P R E L I M I N A R Y
Table 2.
Device Bus Operations—SRAM Byte Mode, CIOs = V
SS
Legend:
L = Logic Low = V
, H = Logic High = V
IH
, V
= 9–11
V, V
HH
= 9.0 ± 0.5 V, X = V
or V
, SA = SRAM Address Input, Byte Mode,
SADD = Flash Sector Address, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out, DNU = Do Not Use
Notes:
1.
Other operations except for those indicated in this column are inhibited.
2.
Do not apply CE#f = V
IL
, CE1#s = V
IL
and CE2s = V
IH
at the same time.
3.
Don’t care or open LB#s or UB#s.
4.
If WP#/ACC = V
IL
, the boot sectors will be protected. If WP#/ACC = V
IH
the boot sectors protection will be removed.
If WP#/ACC = V
ACC
(9V), the program time will be reduced by 40%.
5.
The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector Block Protection
and Unprotection” section.
6.
If WP#/ACC = V
, the two outermost boot sectors remain protected. If WP#/ACC = V
, the two outermost boot sector protection depends on
whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. If WP#/ACC =
V
HH,
all sectors will be unprotected.
Operation
(Notes 1, 2)
CE#f
CE1#s
CE2s
OE# WE#
SA
Addr.
LB#s
(Note 3)
UB#s
(Note 3)
RESET#
WP#/ACC
(Note 4)
DQ7–
DQ0
DQ15–
DQ8
Read from Flash
L
H
X
L
H
X
A
IN
X
X
H
L/H
D
OUT
D
OUT
X
L
Write to Flash
L
H
X
H
L
X
A
IN
X
X
H
(Note 3)
D
IN
D
IN
X
L
Standby
V
±
0.3 V
H
X
X
X
X
X
X
X
V
±
0.3 V
H
High-Z
High-Z
X
L
Output Disable
L
L
H
H
H
SA
X
DNU
DNU
H
L/H
High-Z
High-Z
Flash Hardware
Reset
X
H
X
X
X
X
X
X
X
L
L/H
High-Z
High-Z
X
L
Sector Protect (Note
5)
L
H
X
H
L
X
SADD,
A6 = L,
A1 = H,
A0 = L
X
X
V
ID
L/H
D
IN
X
X
L
Sector Unprotect
(Note 5)
L
H
X
H
L
X
SADD,
A6 = H,
A1 = H,
A0 = L
X
X
V
ID
(Note 6)
D
IN
X
X
L
Temporary Sector
Unprotect
X
H
X
X
X
X
A
IN
X
X
V
ID
(Note 6)
D
IN
High-Z
X
L
Read from SRAM
H
L
H
L
H
SA
A
IN
X
X
H
X
D
OUT
High-Z
Write to SRAM
H
L
H
X
L
SA
A
IN
X
X
H
X
D
IN
High-Z
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