參數(shù)資料
型號: AM41PDS3228DT11IT
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲器
英文描述: 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 8 X 11.60 MM, FBGA-73
文件頁數(shù): 35/59頁
文件大?。?/td> 560K
代理商: AM41PDS3228DT11IT
34
Am41PDS3228D
May 13, 2002
P R E L I M I N A R Y
Note:
Typical values measured at V
CC
= 2.0 V, T
A
= 25
°
C. Not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
–1.0
1.0
μA
I
CC
Operating Power Supply Current
I
IO
= 0 mA, CE1#s = V
IL
, CE2s =
WE# = V
IH
, V
IN
= V
IH
or V
IL
2
mA
I
CC1
s
Average Operating Current
Cycle time = 1 μs, 100% duty,
I
IO
= 0 mA, CE1#s
0.2 V,
CE2
V
CC
– 0.2 V, V
IN
0.2 V or
V
IN
V
CC
– 0.2 V
2
mA
I
CC2
s
Average Operating Current
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
17
mA
V
OL
Output Low Voltage
I
OL
= 0.1 mA
0.2
V
V
OH
Output High Voltage
I
OH
= –0.1 mA
CE1#s
V
CC
– 0.2 V, CE2
V
CC
0.2 V (CE1#s controlled) or CE2
0.2 V (CE2s controlled), CIOs =
V
SS
or V
CC
, Other input = 0 ~ V
CC
1.4
V
I
SB1
Standby Current (CMOS)
0.5
8
μA
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