參數(shù)資料
型號(hào)： AM41DL3208GB30IT
廠商： Spansion Inc.
英文描述： LJT 79C 79#22D PIN RECP
中文描述： 堆疊式多芯片封裝（MCP）閃存和SRAM
文件頁數(shù)： 5/65頁
文件大?。?/td> 1288K
代理商： AM41DL3208GB30IT
4
Am41DL3208G
February 13, 2002
P R E L I M I N A R Y
Temporary Sector/Sector Block Unprotect .............................52
Figure 25. Temporary Sector/Sector Block Unprotect
Timing Diagram............................................................................... 52
Figure 26. Sector/Sector Block Protect and Unprotect
Timing Diagram............................................................................... 53
Alternate CE#f Controlled Erase and Program Operations ....54
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Op-
eration Timings................................................................................ 55
SRAM Read Cycle ..................................................................56
Figure 28. SRAM Read Cycle
—
Address Controlled....................... 56
Figure 29. SRAM Read Cycle......................................................... 57
SRAM Write Cycle ..................................................................58
Figure 30. SRAM Write Cycle
—
WE# Control................................. 58
Figure 31. SRAM Write Cycle
—
CE1#s Control.............................. 59
Figure 32. SRAM Write Cycle
—
UB#s and LB#s Control............... 60
Flash Erase And Programming Performance ........................61
Flash Latchup Characteristics. . . . . . . . . . . . . . . 61
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 61
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 61
SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 62
Figure 33. CE1#s Controlled Data Retention Mode....................... 62
Figure 34. CE2s Controlled Data Retention Mode......................... 62
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 63
FLB073
—
73-Ball Fine-Pitch Grid Array 8 x 11.6 mm .............63
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 64
Revision A (January 3, 2002) .................................................64
相關(guān)PDF資料
PDF描述
AM41DL3208GB35IT Circular Connector; No. of Contacts:79; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
AM41DL3208GB40IT LJT 41C 41#20 PIN RECP
AM41DL3208GB45IT LJT 41C 41#20 PIN WALL RECP
AM41DL3208GB70I Circular Connector; No. of Contacts:41; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
AM41DL3208GB70IT Circular Connector; No. of Contacts:41; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM41DL3208GB35IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3208GB40IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3208GB45IT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM41DL3208GB55IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3208GB70I 制造商:Spansion 功能描述:COMBO 2MX16/4MX8 FLASH + 512KX16/1MX8 SRAM 3V/3.3V 73FBGA - Trays
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