參數(shù)資料
型號(hào): AM30LV0064DJ40E2IT
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
中文描述: 8M X 8 FLASH 3V PROM, 35 ns, PDSO40
封裝: MO-024AC, TSOP2-44/40
文件頁(yè)數(shù): 8/41頁(yè)
文件大?。?/td> 1067K
代理商: AM30LV0064DJ40E2IT
8
Am30LV0064D
CONNECTION DIAGRAMS (Continued)
Note:
The ball grid array is depopulated to 40 signal balls. The maximum package height is 1.2 mm. The 9 x 9 x 9 x 9 outrigger
balls (shaded) may be required for higher density devices in larger packages. The shaded ball region should be treated as a
“keep out” area with pads placed to allow larger devices to be accommodated.
Special Handling Instructions
Special handling is required for Flash Memory prod-
ucts in FBGA packages.
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compro-
mised if the package body is exposed to temperatures
above 150
°
C for prolonged periods of time.
A
B
C
D
E
F
G
H
J
K
1
2
3
4
5
6
0.8
0.8
0.8
0.8
1.6
0.8
0.400 mm 0.250 SMD, Ball = 0.3 mm
NC
V
CC
NC
NC
NC
NC
NC
NC
V
CCQ
NC
NC
CE#
RE# RY/BY# SE#
IO7
IO6
IO5
IO4
NC
NC
CLE
ALE
WE#
WP#
IO0
IO1
IO2
IO3
NC
NC
V
SS
NC
NC
RFU
NC
NC
NC
V
SS
NC
15 mm
8
40-Ball FBGA
Top View, Balls Facing Down
相關(guān)PDF資料
PDF描述
AM30LV0064DJ40F2IT 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM30LV0064DJ40F2I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM
AM30LV0064DJ40F2IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
AM30LV0064DJ40WGI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM
AM30LV0064DJ40WGIT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
AM30N02-40D 制造商:ANALOGPOWER 制造商全稱:ANALOGPOWER 功能描述:N-Channel 20-V (D-S) MOSFET