參數(shù)資料
型號: AM30LV0064DJ40E2IT
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
中文描述: 8M X 8 FLASH 3V PROM, 35 ns, PDSO40
封裝: MO-024AC, TSOP2-44/40
文件頁數(shù): 38/41頁
文件大?。?/td> 1067K
代理商: AM30LV0064DJ40E2IT
38
Am30LV0064D
PROGRAM AND ERASE CHARACTERISTICS
VALID BLOCKS
Note:
The J40 device is guaranteed to ship with all valid blocks (no invalid blocks).
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP II PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Symbol
Parameter
Min
Typ
Max
Unit
t
R
Read Data Transfer Time
6.5
7
μs
t
PGM
Page Program Time
0.2
1.0
ms
t
ERS
Block Erase Time
2
10
ms
Symbol
Parameter
Min
Typ
Max
Unit
J40 N
V/B
Number of Valid Blocks
1024
1024
1024
Blocks
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
85
°
C
10
Years
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