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參數(shù)資料
| 型號： | AM30LV0064DJ40E2IT |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| 中文描述： | 8M X 8 FLASH 3V PROM, 35 ns, PDSO40 |
| 封裝： | MO-024AC, TSOP2-44/40 |
| 文件頁數(shù)： | 40/41頁 |
| 文件大?。?/td> | 1067K |
| 代理商： | AM30LV0064DJ40E2IT |
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40
Am30LV0064D
Revision B+3 (March 8, 1999)
Ordering Information
Changed nomenclature for the FBE040 FBGA pack-
age to WG.
Revision B+4 (April 21, 1999)
Physical Dimensions
Corrected the BSC length and width dimensions in the
FBE040 drawing for the ball grid array.
Revision B+5 (June 17, 1999)
Global
Deleted references to K40 ordering part number and
commercial temperature range.
Distinctive Characteristics
Endurance is now 10,000 cycles. Added bullets for in-
dustrial range and 100% good blocks.
AC Characteristics
Changed t
WH
to 20 ns. Added note for t
REA
.
Revision C (May 19, 2000)
Global
Changed the data sheet designation from “advance in-
formation” to “preliminary.” Only minor parameter
changes, if any, may occur. Changes to speed, pack-
age, and temperature range combinations may also
appear in future data sheet revisions.
Connection Diagrams
Changed NC to RFU (reserved for future use) on the
following: pin 6 on standard TSOP-II, pin 39 on re-
verse TSOP-II, and ball E1 on FBGA.
Pin Configuration
Added definition of RFU.
Functional Pin Description
Address Latch Enable (ALE): Added ALE signal re-
quirement for address sequence.
Read Data, Gapless Read, Read Spare Area, and
Input Data and Page Program figures
Added CE# don’t care areas to waveforms. Added
notes to figures.
Page Program description
In second paragraph, modified statement on partial
page programming.
Program Operations Flow Chart figure
Added address pointed command box below Start
box.
AC Characteristics
Normal Operation table: Modified note 2.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision C+1 (June 23, 2000)
Ordering Information
Corrected valid combination and package marking for
FBGA package.
Revision C+2 (August 14, 2000)
DC Characteristics table
Added
V
CC
= V
CCQ
as test conditions for V
OL
and V
OH
.
AC Characteristics
Command, Address, and Data Input table:
Changed
t
WP
from 25 to 30 ns, and t
WH
from 20 to 15 ns.
Revision C+3 (October 6, 2000)
Global
Removed “Preliminary” status from data sheet.
DC Characteristics table
Deleted RESET# as a test condition for I
SB2
; the device
does not have that input.
Revision C+4 (October 19, 2004)
Added statement to Cover sheet and first document
page indicating this device is not offered for new
designs.
Added Colophon and updated Trademarks.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for
any
use
that includes
fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2)
for
any use where chance of failure is intolerable
(i.e., submersible repeater and artificial satellite). Please note that Spansion LLC will not be liable
to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operat-
ing conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan
, the US Export Administration Regulations or the applicable laws of any other country,
the
prior authorization by
the respective government entity
will be required for export of those products.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM30LV0064DJ40F2I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM |
| AM30LV0064DJ40F2IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40WGI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM |
| AM30LV0064DJ40WGIT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30N02-40D | 制造商:ANALOGPOWER 制造商全稱:ANALOGPOWER 功能描述:N-Channel 20-V (D-S) MOSFET |
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