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參數(shù)資料
| 型號： | AM29LV128MH93FI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 128兆位（8 M中的x 16-Bit/16 M中的x 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存與VersatileI內(nèi)存/ O控制 |
| 文件頁數(shù)： | 64/65頁 |
| 文件大?。?/td> | 1222K |
| 代理商： | AM29LV128MH93FI |
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62
Am29LV128MH/L
September 9, 2003
D A T A S H E E T
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the SecSi Sector, autoselect, and CFI
functions are unavailable when a program or erase
operation is in progress.
Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.”
Changed CFI website address
Revision B+3 (December 2, 2002)
Global
Added sector group protection throughout datasheet
and added Table 4.
Product Selector Guide
Added V
IO
s to table and removed Note #2
Ordering Information
Corrected typos in V
IO
ranges.
Removed Notes #1 and 2.
Figure 6. Program Suspend/Program Resume
Change wait time to 15
μ
s.
Operating Ranges
Corrected typos in V
IO
ranges.
Removed full voltage range.
CMOS Compatible
Changed V
IH1
and V
IH2
minimum to 1.9.
Removed typos in notes.
Read-Only Characteristics
Added a 30 ns option to t
PACC
and t
OE
standard in ta-
ble.
Added note #3.
Hardware Reset, Erase and Program Operations,
Temporary Sector Unprotect, and Alternate CE#
Controlled Erase and Program Operations
Added Note.
Revision B+4 (February 14, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Product Selector Guide
Removed 93R speed option.
Added note 2.
Ordering Information
Corrected Valid Combination to reflect speed option
changes.
Added Note.
AC Characteristics
Removed 93, 93R speed option.
Added Note
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also added notes 5 and 6.
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also added notes
5.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 4.
Revision C (May 16, 2003)
Global
Converted to full datasheet version.
Modified SecSi Sector Flash Memory Region section
to include ESN references.
Changed data sheet title to Am29LV128MH/L.
Erase and Programming Performance
Input values into table that were previously TBD.
Modified notes.
Revision C + 1 (June 11, 2003)
Product Selector Guide
Added Note 2 to 113 and 123 speed grades
Ordering Information
Modified speed grade options available, changed
speed grades mentioned in Note.
AC Characteristics, Erase and Program Operations
and Alternate CE# Controlled Erase and Program
Operations
Changed t
WHWH1
Accelerated Effective Write Buffer
Program Operations value
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