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參數(shù)資料
| 型號： | AM29LV128MH93FI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 128兆位（8 M中的x 16-Bit/16 M中的x 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存與VersatileI內(nèi)存/ O控制 |
| 文件頁數(shù)： | 63/65頁 |
| 文件大?。?/td> | 1222K |
| 代理商： | AM29LV128MH93FI |
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September 9, 2003
Am29LV128MH/L
61
D A T A S H E E T
REVISION SUMMARY
Revision A (October 3, 2001)
Initial release as abbreviated Advance Information
data sheet.
Revision A+1 (March 20, 2002)
Distinctive Characteristics
Clarified description of Enhanced VersatileIO control.
Ordering Information
Corrected device density in device number/descrip-
tion.
Physical Dimensions
Added drawing that shows both TS056 and TSR056
specifications.
Revision B (July 1, 2002)
Expanded data sheet to full specification version.
Revision B+1 (September 16, 2002)
Distinctive Characteristics, Physical Dimensions
Added 80-Ball Fine-Pitch BGA.
Product Selector Guide
Added 80-Ball Fine-Pitch BGA.
Added Note #1.
Added 103, 108, 113, 118, 123, 128 regulated OPNs.
Changed all OPNs that end with 4 or 9 to 3 or 8.
Program Suspend/Program Resume Command
Sequence
Changed 1ms to 15
μ
s maximum, with a typical of 5
μ
s.
Erase Suspend/Erase Resume Commands
Added that the device requires a typical of 5
μ
s.
Read-Only Operations, Erase Program Operations,
and Alternate CE# Controlled Erase and Program
Operations
Added regulated OPNs.
Changed all OPNs that end with 4 or 9 to 3 or 8.
Revision B+2 (November 11, 2002)
Global
Removed the Enhanced VI/O option and changed it to
VI/O only.
Distinctive Characteristics
Changed the typical sector erase time to TBD.
Changed the typical write buffer word programming
time to TBD.
Product Selector Guide
Removed the 98R, 108, 108R, 118, 118R, 128, and
128R Speed Options.
Replaced Note #2.
Product Selector Guide and Read Only Operations
Added a 30 ns Page Access time and Output Enable
Access time to the 113R and 123R Speed Options.
Ordering Information
Modified Order numbers and package markings to re-
flect the removal of speed options.
Modified the V
IO
ranges.
Added Notes #1 and #2.
Table 4. SecSi Sector Contents
Added x8 and x16
Operating Ranges
Changed the V
IO
supply range to 1.65–3.6 V.
Added V
IO
(regulated voltage range) and V
IO
(full volt-
age range).
CMOS Compatible
Removed V
IL
, V
IH
, V
OL
, and V
OH
from table and added
V
IL1
, V
IH1
, V
IL2
, V
IH2
, V
OL
, V
OH1
, and V
OH2
from the
CMOS table in the Am29LV640MH/L datasheet.
Erase and Programming Performance
Changed the typicals and/or maximums of Chip Erase
Time, Sector Erase Time, Effective Write Buffer Pro-
gram Time, Program Time, and Accelerated Program
Time to TBD.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
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|---|---|
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| AM29LV128ML-123REI | 制造商:Advanced Micro Devices 功能描述:8M X 16 FLASH 3V PROM, 120 ns, PDSO56 |
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