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| 型號： | AM29F040B |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | 4 Megabit (512K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory(4M位均勻扇區(qū)閃速存儲器) |
| 中文描述： | 4兆位（為512k × 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體（4分位均勻扇區(qū)閃速存儲器） |
| 文件頁數(shù)： | 30/30頁 |
| 文件大小： | 416K |
| 代理商： | AM29F040B |
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Am29F040B
REVISION SUMMARY FOR AM29F040B
Global
Formatted for consistency with other 5.0 volt-only data
data sheets.
Revision B+1
AC Characteristics, Erase and Program Operations
Added Note references to t
WHWH1
. Corrected the pa-
rameter symbol for V
CC
Set-up Time to t
VCS
; the
specification is 50
μ
s minimum. Deleted the last row in
table.
Revision B+2
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Infomation
Added extended temperature availability to the -55 and
-70 speed options.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes:Corrected the
notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested. Corrected the note
reference for tVCS. This parameter is not 100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added 20-year data retention bullet.
DC Characterisitics—TTL/NMOS Compatible
V
OH
: Changed the parameter description to “Output
High Voltage” from Output High Level”.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
CC1
, I
CC2
, I
CC3
: Added Note 2 “Maximum I
CC
specifi-
cations are tested with V
CC
= V
CCmax
”.
I
CC3
: Deleted V
CC
= V
CC
Max.
Revision C+1
Command Definitions
Command Definitions table:
Deleted “XX” from the
fourth cycle data column of the Sector Protect Verify
command.
Revision C+2
Test Specifications Table
Corrected the input and output measurement entries in
the “All others” column.
Trademarks
Copyright 1999 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040B120EC | 制造商:AMD 功能描述:* |
| AM29F040B-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP 制造商:SILICON 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP |
| AM29F040B-120ED | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin TSOP 制造商:Spansion 功能描述:Flash Memory IC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP |
| AM29F040B-120EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin TSOP |
| AM29F040B120JC | 制造商:AMD 功能描述:* 制造商:Advanced Micro Devices 功能描述: |
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