參數(shù)資料
型號: AM29F040B
廠商: Analog Devices, Inc.
英文描述: 4 Megabit (512K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory(4M位均勻扇區(qū)閃速存儲器)
中文描述: 4兆位(為512k × 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體(4分位均勻扇區(qū)閃速存儲器)
文件頁數(shù): 24/30頁
文件大?。?/td> 416K
代理商: AM29F040B
24
Am29F040B
AC CHARACTERISTICS
AC CHARACTERISTICS
Erase and Program Operations
Alternate CE# Controlled Writes
Notes:
1. Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
Note:
Both DQ6 and DQ2 toggle with OE# or CE#. See the text on DQ6 and DQ2 in the section “Write Operation Status” for more
information.
21445C-18
Figure 13.
DQ2 vs. DQ6
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
DQ2 and DQ6 toggle with OE# and CE#
Erase
Complete
Erase
Suspend
Embedded
Erasing
Parameter Symbols
Description
Speed Options
Unit
JEDEC
Std
-55
-70
-90
-120
-150
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
55
70
90
120
150
ns
t
AVEL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
40
45
45
50
50
ns
t
DVEH
t
DS
Data Setup Time
Min
25
30
45
50
50
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recover Time Before Write
Min
0
ns
t
WLEL
t
WS
CE# Setup Time
Min
0
ns
t
EHWH
t
WH
CE# Hold Time
Min
0
ns
t
ELEH
t
CP
Write Pulse Width
Min
30
35
45
50
50
ns
t
EHEL
t
CPH
Write Pulse Width High
Min
20
20
20
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
(Note 2)
Typ
7
μs
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
1
sec
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參數(shù)描述
AM29F040B120EC 制造商:AMD 功能描述:*
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AM29F040B-120EE 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin TSOP
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