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參數(shù)資料
| 型號(hào)： | AM29F016-75FIB |
| 廠(chǎng)商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 16兆位（2097152 × 8位）的CMOS 5.0伏只，扇區(qū)擦除閃存 |
| 文件頁(yè)數(shù)： | 26/36頁(yè) |
| 文件大?。?/td> | 219K |
| 代理商： | AM29F016-75FIB |
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26
Am29F016
AC CHARACTERISTICS
Write/Erase/Program Operations
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
3. These timings are for Temporary Sector Group Unprotect operation.
Parameter Symbol
Parameter Description
Speed Options (Notes 1 and 2)
Unit
JEDEC
Standard
-75
-90
-120
-150
t
AVAV
t
WC
Write Cycle Time
Min
70
90
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
40
45
50
50
ns
t
DVWH
t
DS
Data Setup Time
Min
40
45
50
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
0
0
0
ns
t
OEH
Output
Enable
Hold Time
Read 2
Min
0
0
0
0
ns
Toggle Bit I and Data Polling
2
Min
10
10
10
10
ns
t
GHWL
t
GHWL
Read Recover Time Before Write
(OE high to WE low)
Min
0
0
0
0
ns
t
ELWL
t
CS
CE Setup Time
Min
0
0
0
0
ns
t
WHEH
t
CH
CE Hold Time
Min
0
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
40
45
50
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
20
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ
7
7
7
7
μ
s
t
WHWH2
t
WHWH2
Sector Erase Operation 1
Typ
1
1
1
1
sec
Max
8
8
8
8
sec
t
VCS
V
CC
Set Up Time 2
Min
50
50
50
50
μ
s
t
VIDR
Rise Time to V
ID
(Notes 2, 3)
Min
500
500
500
500
ns
t
VLHT
Voltage Transition Time (Notes 2, 3)
Min
4
4
4
4
μ
s
t
OESP
OE Setup Time to WE Active (Notes 2, 3)
Min
4
4
4
4
μ
s
t
RP
RESET Pulse Width
Min
500
500
500
500
ns
t
BUSY
Program/Erase Valid to RY/BY Delay
Min
40
40
50
60
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F016-90 | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F016B-120DGC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DPC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DGI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DPI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016-90EC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP |
| AM29F016B-120DGC1 | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F016B-120DPC1 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die |
| AM29F016B120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-120EC | 制造商:Advanced Micro Devices 功能描述: |
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