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參數(shù)資料
| 型號： | AM29F016-75FIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 16兆位（2097152 × 8位）的CMOS 5.0伏只，扇區(qū)擦除閃存 |
| 文件頁數(shù)： | 2/36頁 |
| 文件大?。?/td> | 219K |
| 代理商： | AM29F016-75FIB |
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Am29F016
ded Program Algorithm which is an internal algorithm
that automatically times the program pulse widths and
verifies proper cell margin. Erase is accomplished by
executing the erase command sequence. This will in-
voke the Embedded Erase Algorithm which is an inter-
nal algorithm that automatically preprograms the array
if it is not already programmed before executing the
erase operation. During erase, the device automatically
times the erase pulse widths and verifies proper cell
margin.
This device also features a sector erase architecture.
This allows for sectors of memory to be erased and re-
programmed without affecting the data contents of
other sectors. A sector is typically erased and verified
within one second. The Am29F016 is erased when
shipped from the factory.
The Am29F016 device also features hardware sector
group protection. This feature will disable both pro-
gram and erase operations in any combination of eight
sector groups of memory. A sector group consists of
four adjacent sectors grouped in the following pattern:
sectors 0–3, 4–7, 8–11, 12–15, 16–19, 20–23, 24–27,
and 28–31.
AMD has implemented an Erase Suspend feature that
enables the user to put erase on hold for any period of
time to read data from, or program data to, a sector that
was not being erased. Thus, true background erase
can be achieved.
The device features single 5.0 Volt power supply oper-
ation for both read and write functions. Internally gen-
erated and regulated voltages are provided for the
program and erase operations. A low V
CC
detector au-
tomatically inhibits write operations during power tran-
sitions. The end of program or erase is detected by the
RY/BY pin, Data Polling of DQ7, or by the Toggle Bit I
(DQ6).Once the end of a program or erase cycle has
been completed, the device automatically resets to the
readmode.
The Am29F016 also has a hardware RESET pin.
When this pin is driven low, execution of any Embed-
ded Program Algorithm or Embedded Erase Algorithm
will be terminated. The internal state machine will then
be reset into the read mode. The RESET pin may be
tied to the system reset circuitry. Therefore, if a system
reset occurs during the Embedded Program Algorithm
or Embedded Erase Algorithm, the device will be auto-
matically reset to the read mode. This will enable the
system’s microprocessor to read the boot-up firmware
from the Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost
effectiveness. The Am29F016 memory electrically
erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The bytes are pro-
grammed one byte at a time using the EPROM pro-
gramming mechanism of hot electron injection.
Flexible Sector-Erase Architecture
I
Thirty two 64 Kbyte sectors
I
Eight sector groups each of which consists of 4
adjacent sectors in the following pattern: sectors
0–
3, 4
–
7, 8
–
11, 12
–
15, 16
–
19, 20
–
23, 24
–
27, and
28
–
31.
I
Individual-sector or multiple-sector erase capability
I
Sector group protection is user-definable
18805D-1
SA31
SA30
SA29
SA28
SA3
SA2
SA1
SA0
1FFFFFh
1EFFFFh
1DFFFFh
1CFFFFh
1BFFFFh
1AFFFFh
19FFFFh
18FFFFh
17FFFFh
16FFFFh
15FFFFh
14FFFFh
13FFFFh
12FFFFh
11FFFFh
10FFFFh
1FFFFFh
1EFFFFh
1DFFFFh
1CFFFFh
1BFFFFh
1AFFFFh
09FFFFh
08FFFFh
07FFFFh
06FFFFh
05FFFFh
04FFFFh
03FFFFh
02FFFFh
01FFFFh
00FFFFh
000000h
Sector
Group
7
Sector
Group
0
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
32 Sectors Total
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F016-90 | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F016B-120DGC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DPC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DGI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DPI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016-90EC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP |
| AM29F016B-120DGC1 | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F016B-120DPC1 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die |
| AM29F016B120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-120EC | 制造商:Advanced Micro Devices 功能描述: |
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