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參數(shù)資料
| 型號(hào)： | AM29F016B-120DPI1 |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| 中文描述： | 2M X 8 FLASH 5V PROM, 120 ns, UUC37 |
| 封裝： | DIE-37 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 190K |
| 代理商： | AM29F016B-120DPI1 |
SUPPLEMENT
2/17/98
Publication#
21551
Issue Date:
February 1998
Rev:
A
Amendment/
+1
Am29F016B Known Good Die
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
5.0 V
±
10%, single power supply operation
— Minimizes system level power requirements
I
Manufactured on 0.35
μm process technology
I
High performance
— 120 ns access time
I
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— <1
μ
A typical standby current (standard access
time to active mode)
I
Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
I
Minimum 100,000 write/erase cycles guaranteed
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
I
Ready/Busy output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
I
Erase Suspend/Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
I
Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
I
Tested to datasheet specifications at
temperature
I
Quality and reliability levels equivalent to
standard packaged components
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F016B-120DTI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DWI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DWC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B | LM3350 Switched Capacitor Voltage Converter; Package: MINI SOIC; No of Pins: 8; Qty per Container: 3500; Container: Reel |
| Am29F016B-70E4EB | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016B120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 90ns 48-Pin TSOP 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP |
| AM29F016B-90SC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 44-Pin SOP |
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