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參數(shù)資料
| 型號(hào)： | AM29F016-75FIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 16兆位（2097152 × 8位）的CMOS 5.0伏只，扇區(qū)擦除閃存 |
| 文件頁(yè)數(shù)： | 24/36頁(yè) |
| 文件大?。?/td> | 219K |
| 代理商： | AM29F016-75FIB |
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24
Am29F016
DC CHARACTERISTICS (continued)
CMOS Compatible
Notes:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 1 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Program or Erase Algorithm is in progress.
3. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
±
1.0
μ
A
I
LIT
A9 Input Load Current
V
CC
= V
CC
Max, A9 = 12.0 Volt
50
μ
A
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
±
1.0
μ
A
I
CC1
V
CC
Active Current (Note 1)
CE = V
IL,
OE = V
IH
25
40
mA
I
CC2
V
CC
Active Current (Notes 2, 3)
CE
= V
IL,
OE
= V
IH
30
40
mA
I
CC3
V
CC
Standby Current
V
CC
=
V
CC
Max,
CE
=
V
CC
±
0.3 V,
RESET
=
V
CC
±
0.3 V
1
5
μ
A
I
CC4
V
CC
Standby Current (Reset)
V
CC
= V
CC
Max,
RESET = V
SS
±
0.3 V
1
5
μ
A
V
IL
Input Low Level
–0.5
0.8
V
V
IH
Input High Level
0.7 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect
and Sector Protect
V
CC
= 5.0 Volt
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC
Min
0.85 V
CC
V
V
OH2
I
OH
= –100
μ
A, V
CC
= V
CC
Min
V
CC
– 0.4
V
V
LKO
Low V
CC
Lock-out Voltage
3.2
4.2
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F016-90 | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F016B-120DGC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DPC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DGI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DPI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016-90EC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP |
| AM29F016B-120DGC1 | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F016B-120DPC1 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die |
| AM29F016B120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-120EC | 制造商:Advanced Micro Devices 功能描述: |
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