參數(shù)資料
型號(hào)： AM29DL324GT12WMIN
廠商： SPANSION LLC
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 120 ns, PBGA48
封裝： 6 X 12 MM, 0.80 MM PITCH, FBGA-48
文件頁數(shù)： 48/59頁
文件大?。?/td> 1404K
代理商： AM29DL324GT12WMIN
50
Am29DL32xG
September 27, 2004
DAT AS HEE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 2.7 V (3.0 V for regulated devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP PIN AND FINE-PITCH BGA CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Unit
Comments
Sector Erase Time
0.4
5
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
28
sec
Byte Program Time
5
150
s
Excludes system level
overhead (Note 5)
Accelerated Byte/Word Program Time
4
120
s
Word Program Time
7
210
s
Chip Program Time
Byte Mode
21
63
sec
Word Mode
14
42
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT = 0
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN = 0
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years
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