參數(shù)資料
型號(hào): AM29DL324GT12WMIN
廠商: SPANSION LLC
元件分類: PROM
英文描述: 2M X 16 FLASH 3V PROM, 120 ns, PBGA48
封裝: 6 X 12 MM, 0.80 MM PITCH, FBGA-48
文件頁數(shù): 31/59頁
文件大?。?/td> 1404K
代理商: AM29DL324GT12WMIN
September 27, 2004
Am29DL32xG
35
DA T A SH EET
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum I
CC specifications are tested with VCC = VCCmax.
3. I
CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN = VSS to VCC,
V
CC = VCC max
±1.0
A
I
LIT
A9 Input Load Current
V
CC = VCC max; A9 = 12.5 V
35
A
I
LO
Output Leakage Current
V
OUT = VSS to VCC,
V
CC = VCC max
±1.0
A
I
CC1
V
CC Active Read Current
(Notes 1, 2)
CE# = V
IL, OE# = VIH,
Byte Mode
5 MHz
10
16
mA
1 MHz
2
4
CE# = V
IL, OE# = VIH,
Word Mode
5 MHz
10
16
1 MHz
2
4
I
CC2
V
CC Active Write Current (Notes 2, 3)
CE# = V
IL, OE# = VIH, WE# = VIL
15
30
mA
I
CC3
V
CC Standby Current (Note 2)
CE#, RESET# = V
CC ± 0.3 V
0.2
5
A
I
CC4
V
CC Reset Current (Note 2)
RESET# = V
SS ± 0.3 V
0.2
5
A
I
CC5
Automatic Sleep Mode (Notes 2, 4)
V
IH = VCC ± 0.3 V;
V
IL = VSS ± 0.3 V
0.2
5
A
I
CC6
V
CC Active Read-While-Program
Current (Notes 1, 2)
CE# = V
IL, OE# = VIH
Byte
21
45
mA
Word
21
45
I
CC7
V
CC Active Read-While-Erase
Current (Notes 1, 2)
CE# = V
IL, OE# = VIH
Byte
21
45
mA
Word
21
45
I
CC8
V
CC Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE# = V
IL, OE# = VIH
17
35
mA
V
IL
Input Low Voltage
–0.5
0.8
V
IH
Input High Voltage
0.7 x V
CC
V
CC + 0.3
V
HH
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
V
CC = 3.0 V ± 10%
8.5
9.5
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC = 3.0 V ± 10%
8.5
12.5
V
OL
Output Low Voltage
I
OL = 4.0 mA, VCC = VCC min
0.45
V
OH1
Output High Voltage
I
OH = –2.0 mA, VCC = VCC min
0.85 V
CC
V
OH2
I
OH = –100 A, VCC = VCC min
V
CC–0.4
V
LKO
Low V
CC Lock-Out Voltage (Note 5)
2.3
2.5
V
相關(guān)PDF資料
PDF描述
AM29DL800BT70RSF 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
AM29F032B-90SDB 4M X 8 FLASH 5V PROM, 90 ns, PDSO44
Am29LV010BB-120FI 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
Am29LV010BB-120FIB 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV128MH112EI 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29DL400BB70EC 制造商:AMD 功能描述:* 制造商:Advanced Micro Devices 功能描述:
AM29DL400BB90EC 制造商:AMD 功能描述:NEW
AM29DL640G70EI 制造商:Advanced Micro Devices 功能描述:
AM29DL800BB-120WBD 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 120ns 48-Pin FBGA
AM29DL800BB-70SI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 44SOIC - Trays