參數(shù)資料
型號: AGR26180EF
廠商: LSI CORP
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: FM-4
文件頁數(shù): 5/5頁
文件大?。?/td> 223K
代理商: AGR26180EF
APTGT100SK60TG
A
P
T
G
T
100
S
K
60T
G
R
ev
1
J
une
,2006
www.microsemi.com
5 - 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=150°C
0
25
50
75
100
125
150
175
200
0
0.4
0.8
1.2
1.6
2
2.4
VF (V)
I F
(A
)
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0
25
50
75
100
125
150
IC (A)
F
m
ax,
O
p
er
at
in
g
F
req
u
e
n
cy
(
k
H
z)
VCE=300V
D=50%
RG=3.3
TJ=150°C
Tc=85°C
Operating Frequency vs Collector Current
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Th
e
rm
a
lI
m
p
e
da
nc
e
(
°C
/W
)
Diode
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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