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參數(shù)資料
| 型號： | AGR26180EF |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 223K |
| 代理商： | AGR26180EF |
APTGT100SK60TG
A
P
T
G
T
100
S
K
60T
G
–
R
ev
1
J
une
,2006
www.microsemi.com
4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
TJ=150°C
0
25
50
75
100
125
150
175
200
00.511.522.5
3
VCE (V)
I C
(A
)
Output Characteristics
VGE=15V
VGE=13V
VGE=19V
VGE=9V
0
25
50
75
100
125
150
175
200
0
0.5
1
1.5
2
2.5
3
3.5
VCE (V)
I C
(A
)
TJ = 150°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=150°C
0
25
50
75
100
125
150
175
200
56789
10
11
12
VGE (V)
I C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
0
1
2
3
4
5
6
7
0
25
50
75 100 125 150 175 200
IC (A)
E
(
m
J
)
VCE = 300V
VGE = 15V
RG = 3.3
TJ = 150°C
Eon
Eoff
Er
0
2
4
6
8
0
5
10
15
20
25
30
Gate Resistance (ohms)
E
(
m
J
)
VCE = 300V
VGE =15V
IC = 100A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
50
100
150
200
250
0
100 200 300 400 500 600 700
VCE (V)
I F
(A
)
VGE=15V
TJ=150°C
RG=3.3
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
T
h
er
m
a
lIm
p
ed
a
n
c
e(
°C
/W
)
IGBT
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