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參數(shù)資料
| 型號： | AGR21125EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 217K |
| 代理商： | AGR21125EF |
2
Agere Systems Inc.
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
April 2004
AGR21125E
Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135.0 MHz, and f2 = 2145 MHz.
VDD =28 Vdc, IDQ = 1200 mA, and POUT = 28 W avg.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =200 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
4
Adc
Zero Gate Voltage Drain Leakage Current (VDS =28 V, VGS =0V)
IDSS
——
12
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—9
—
S
Gate Threshold Voltage (VDS =10V, ID =400 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS =28 V, ID = 1200 mA)
VGS(Q)
—3.8
—
Vdc
Drain-source On-voltage (VGS =10V, ID =1 A)
VDS(ON)
—0.08
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28V, VGS =0, f= 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS
—3.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain*
GPS
12
14
—
dB
Drain Efficiency*
η
25
27
—
%
Third-order Intermodulation Distortion*
(IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
IM3
—
–34.5
–33
dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
ACPR
—
–38
–37
dBc
Input Return Loss*
IRL
—
–10
–9
dB
Power Output, 1 dB Compression Point
(VDD =28 V, fC = 2140.0 MHz)
P1dB
115
125
—
W
Output Mismatch Stress
(VDD =28 V, POUT = 125 W (CW), IDQ =1200mA, fC = 2140.0 MHz
VSWR = 10:1; [all phase angles])
ψ
No degradation in output power.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR21125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21N090EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
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