參數(shù)資料
型號(hào)： AGR21125EF
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： FM-2
文件頁(yè)數(shù)： 10/10頁(yè)
文件大?。?/td> 217K
代理商： AGR21125EF
Agere Systems Inc.
9
Preliminary Data Sheet
AGR21125E
April 2004
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain.
AGR21125EU
AGR21125EF
Label Notes:
s
M before the part number denotes model program. X before the part number denotes engineering prototype.
s
The last two letters of the part number denote wafer technology and package type.
s
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
s
ZZZZZZZ = seven-digit assembly lot number on production parts.
s
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
AGERE
M-AGR21125U
YYWWUR
ZZZZZZZ
AGERE
AGR21125XU
YYWWLL XXXXX
ZZZZZZZ
1
2
3
1
2
3
AGERE
M-AGR21125F
YYWWUR
ZZZZZZZ
1
3
2
AGERE
AGR21125XF
YYWWLL XXXXX
ZZZZZZZ
1
2
3
相關(guān)PDF資料
PDF描述
AGR21125EU S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR21125EU S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR21125EF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR26045EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR26045EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AGR21125EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21180EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21N090EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR26045EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR26125E 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
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