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參數(shù)資料
| 型號(hào)： | ADF4218LBRUZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 19/24頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC PLL FREQ SYNTHESIZER 20TSSOP |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 類型： | 時(shí)鐘/頻率合成器（RF/IF） |
| PLL： | 是 |
| 輸入： | CMOS，TTL |
| 輸出： | 時(shí)鐘 |
| 電路數(shù)： | 1 |
| 比率 - 輸入:輸出： | 3:1 |
| 差分 - 輸入:輸出： | 是/無 |
| 頻率 - 最大： | 3GHz |
| 除法器/乘法器： | 是/無 |
| 電源電壓： | 2.6 V ~ 3.3 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 20-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 20-TSSOP |
| 包裝： | 帶卷 (TR) |
REV. C
ADF4217L/ADF4218L/ADF4219L
–4–
ABSOLUTE MAXIMUM RATINGS
1, 2
(T
A = 25
°C, unless otherwise noted.)
VDD1 to GND
3
. . . . . . . . . . . . . . . . . . . . . . –0.3 V to +3.6 V
VDD1 to VDD2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
VP1, VP2 to GND . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.8 V
VP1, VP2 to VDD1 . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
Digital I/O Voltage to GND . . . . . . . . –0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to VP + 0.3 V
REFIN, RF1IN (A, B), IFIN (A, B)
to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
RFINA to RFINB . . . . . . . . . . . . . . . . . . . . . . . . . . .
±320 mV
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . .
–40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150
°C
TSSOP JA Thermal Impedance . . . . . . . . . . . . . 150.4
°C/W
LGA JA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
°C/W
Lead Temperature, Soldering
TSSOP, Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . 215
°C
TSSOP, Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . 220
°C
LGA, Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . 240
°C
LGA, Infrared (20 sec) . . . . . . . . . . . . . . . . . . . . . . . 240
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
2This device is a high performance RF integrated circuit with an ESD rating of
< 2 kV and is ESD sensitive. Proper precautions should be taken for handling and
assembly.
3GND = AGND = DGND = 0 V.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although the ADF4217L/
ADF4218L/ADF4219L feature proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Option*
ADF4217L/ADF4218L/ADF4219LBRU
–40
°C to +85°CThin Shrink Small Outline Package (TSSOP)
RU-20
ADF4217L/ADF4218L/ADF4219LBCC
–40
°C to +85°CChip Array CASON (LGA)
CC-24
*Contact the factory for chip availability.
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