參數(shù)資料
型號(hào): ACT-F512K32N-090P3T
廠商: Aeroflex Inc.
英文描述: 3-line to 8-line decoder / demultiplexer 16-SOIC 0 to 70
中文描述: 行為F512K32高速16兆位閃存多芯片模塊
文件頁數(shù): 2/20頁
文件大?。?/td> 238K
代理商: ACT-F512K32N-090P3T
A
Aeroflex Circuit Technology
SCD1665 REV B 6/29/01 Plainview NY (516) 694-6700
2
sealed co-fired ceramic 66 pin, 1.08"SQ PGA
or a 68 lead, .88"SQ Ceramic Gull Wing CQFP
package for operation over the temperature
range of -55°C to +125°C and military
environment.
Each flash memory die is organized as
512KX8
bits
and
programmed in-system with the standard
system 5.0V Vcc supply. A 12.0V V
PP
is not
required for write or erase operations. The
MCM can also be reprogrammed with standard
EPROM programmers (with the proper socket).
The standard ACT–F512K32 offers access
times between 60ns and 150ns, allowing
operation of high-speed microprocessors
without
wait
states.
contention, the device has separate chip
enable (CE) and write enable (WE). The
ACT-F512K32 is command set compatible with
JEDEC
standard
4
Commands are written to the command
register using standard microprocessor write
timings. Register contents serve as input to an
internal state-machine which controls the
erase and programming circuitry. Write cycles
also internally latch addresses and data
needed for the programming and erase
operations.
Reading data out of the device is similar to
reading from 12.0V Flash or EPROM devices.
The
ACT-F512K32
executing the program command sequence.
This will invoke the Embedded Program
Algorithm which is an internal algorithm that
automatically times the program pulse widths
and verifies proper cell margin. Typically, each
sector can be programmed and verified in less
than one second. Erase is accomplished by
is
designed
to
be
To
eliminate
bus
Mbit
EEPROMs.
is
programmed
by
executing the erase command sequence. This
will invoke the Embedded Erase Algorithm
which
is
an
internal
automatically preprograms the array, (if it is not
already programmed) before executing the
erase operation. During erase, the device
automatically times the erase pulse widths and
verifies proper cell margin.
Each die in the module or any individual
sector of the die is typically erased and verified
in
1.5
seconds
(if
preprogrammed).
Each die also features a sector erase
architecture. The sector mode allows for 64K
byte blocks of memory to be erased and
reprogrammed without affecting other blocks.
The ACT-F512K32 is erased when shipped
from the factory.
The device features single 5.0V power
supply operation for both read and write
functions. lnternally generated and regulated
voltages are provided for the program and
erase operations. A low V
CC
detector
automatically inhibits write operations on the
loss of power. The end of program or erase is
detected by Data Polling of D7 or by the Toggle
Bit feature on D6. Once the end of a program
or erase cycle has been completed, the device
internally resets to the read mode.
All bits of each die, or all bits within a
sector
of
a
die,
Fowler-Nordhiem
tunneling.
programmed one byte at a time by hot electron
injection.
DESC Standard Military Drawing (SMD)
numbers are released.
algorithm
that
already
completely
are
erased
Bytes
via
are
General Description, Cont’d
,
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