參數(shù)資料
型號(hào)： ACT-E1M32T-080F14T
廠商： Aeroflex Inc.
英文描述： ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
中文描述： 行為F1M32高速啟動(dòng)塊32兆位閃存多芯片模塊
文件頁數(shù)： 5/9頁
文件大小： 149K
代理商： ACT-E1M32T-080F14T
Aeroflex Circuit Technology
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
5
AC Characteristics – Write/Erase/Program Operations, CE Controlled
(T
A
= -55
°
C to +125
°
C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Symbol
JEDEC
Standard
+3.3V
V
CC
(2)
Typical
120nS
Min Max
120
+4.5V to +5.5V V
CC
Units
80nS
Min Max
80
100nS
Min Max
100
120nS
Min Max
120
Write Cycle Time
t
AVAV
t
PHEL
nS
RP High Recovery to CE Low
1.5
.45
.45
.45
μ
S
WE Setup to CE Going Low
t
WLEL
0
0
0
0
nS
Boot Block Unlock Setup to CE Going High
(1)
t
PHHEH
200
100
100
100
nS
V
PP
Setup to CE Going High
(1)
t
VPEH
200
100
100
100
nS
Address Setup to CE Going High
t
AVEH
90
60
60
60
nS
Data Setup to CE Going High
t
DVEH
70
60
60
60
nS
CE Pulse Width
t
ELEH
90
60
60
60
nS
Data Hold Time from CE High
t
EHDX
0
0
0
0
nS
Address Hold Time from CE High
t
EHAX
0
0
0
0
nS
WE Hold Time from CE High
t
EHWH
0
0
0
0
nS
CE Pulse Width High
t
EHEL
20
20
20
20
nS
Duration of Word Write Operation
(1)
(x32)
t
EHQV
1
6
6
6
6
μ
S
Duration of Erase Operation (Boot)
(1)
t
EHQV
2
0.3
0.3
0.3
0.3
Sec
Duration of Erase Operation (Parameter)
(1)
t
EHQV
3
0.3
0.3
0.3
0.3
Sec
Duration of Erase Operation (Main)
(1)
t
EHQV
4
0.6
0.6
0.6
0.6
Sec
V
PP
Hold from Valid SRD
(1)
t
QVVL
0
0
0
0
nS
RP V
HH
Hold from Valid SRD
(1)
t
QVPH
0
0
0
0
nS
Boot Block Lock Delay
(1)
NOTES:
1. Sampled, but not 100% tested.
2. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not Tested).
t
PHBR
200
100
100
100
nS
AC Characteristics – Read Only Operations
(T
A
= -55
°
C to +125
°
C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Symbol
JEDEC
Standard
+3.3V
V
CC
(2)
Typical
120nS
Min Max
120
+4.5V to +5.5V V
CC
Units
80nS
Min Max
80
100nS
Min Max
100
120nS
Min Max
120
Read Cycle Time
t
AVAV
nS
Address to Output Delay
t
AVQV
120
80
100
120
nS
CE to Output Delay
t
ELQV
120
80
100
120
nS
RP to Output Delay
t
PHQV
1.5
.45
.45
.45
μ
S
OE to Output Delay
t
GLQV
65
40
40
40
nS
CE to Output in Low Z
(1)
t
ELQX
0
0
0
0
nS
CE to Output in High Z
(1)
t
EHQZ
55
30
30
30
nS
OE to Output in Low Z
(1)
t
GLQX
0
0
0
0
nS
OE to Output in High Z
(1)
t
GHQZ
45
30
30
30
nS
Output Hold from Address, CE, or OE Change,
Whichever Occurs First
(1)
Notes:
1. Guaranteed by design, but not tested.
2. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not Tested).
t
OH
0
0
0
0
nS
相關(guān)PDF資料
PDF描述
ACT-E1M32T-100F14C ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
ACT-E1M32T-100F14I ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ACT-E1M32T-100F14C 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
ACT-E1M32T-100F14I 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
ACT-E1M32T-100F14M 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
ACT-E1M32T-100F14Q 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
ACT-E1M32T-100F14T 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
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