
Aeroflex Circuit Technology
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
4
V
PP
Deep Power Down Current
I
PPD
RP = GND ± 0.2V
40
40
μ
A
μ
A
V
PP
Read Current
I
PPR
V
PP
> V
PPH
2
800
800
V
PP
Write Current
I
PPW
1
V
PP
= V
PPH
1
(at 5V), Word Write in Progress (x32)
120
120
mA
I
PPW
2
V
PP
= V
PPH
2
(at 12V), Word Write in Progress (x32)
100
100
mA
V
PP
Erase Current
I
PPE
1
V
PP
= V
PPH
1
(at 5V), Block Erase in Progress
120
100
mA
I
PPE
2
V
PP
= V
PPH
2
(at 12V), Block Erase in Progress
100
80
mA
V
PP
Erase Suspend Current
I
PPES
V
PP
= V
PPH
,
Block Erase Suspend in Progress
800
800
μ
A
RP Boot Block Unlock Current
I
RP
RP = V
HH
, V
PP
= 12V
2
2
mA
Output Low Voltage
V
OL
V
CC
= V
CC
Min., I
OL
= 5.8 mA (5V), 2 mA (3.3V)
0.45
0.45
V
Output High Voltage
V
OH
1
V
CC
= V
CC
Min., I
OH
= -2.5 mA
0.85 x
V
CC
V
CC
-
0.4V
0.0
0.85 x
V
CC
V
CC
-
0.4V
0.0
V
V
OH
2
V
CC
= V
CC
Min., I
OH
= -100 μA
V
V
PP
Lock-Out Voltage
V
PPLK
Complete Write Protection
1.5
1.5
V
V
PP
(Program/Erase Operations)
V
PPH
1
V
PP
= at 5V
4.5
5.5
4.5
5.5
V
V
PP
(Program/Erase Operations)
V
PPH
2
V
PP
= at 12V
11.4
12.6
11.4
12.6
V
V
CC
Erase/Write Lock Voltage
V
LKO
Locked Condition
0
2.0
0
2.0
V
RP Unlock Voltage
Notes:
1. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not tested).
V
HH
Boot Block Write/Erase, V
PP
= 12V
11.4
12.6
11.4
12.6
V
AC Characteristics – Write/Erase/Program Operations – WE Controlled
(T
A
= -55
°
C to +125
°
C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Symbol
JEDEC
Standard
+3.3V V
CC
(2)
Typical
120nS
Min Max
120
+4.5V to +5.5V V
CC
Units
80nS
Min Max
80
100nS
Min Max
100
120nS
Min Max
120
Write Cycle Time
t
AVAV
nS
RP High Recovery to WE Going Low
t
PHWL
1.5
.45
.45
.45
μ
S
CE Setup to WE Going Low
t
ELWL
0
0
0
0
nS
Boot Block Unlock Setup to WE Going High
(1)
t
PHHWH
200
100
100
100
nS
V
PP
Setup to WE Going High
(1)
t
VPWH
200
100
100
100
nS
Address Setup to WE Going High
t
AVWH
90
60
60
60
nS
Data Setup to WE Going High
t
DVWH
70
60
60
60
nS
WE Pulse Width
t
WLWH
90
60
60
60
nS
Data Hold Time from WE High
t
WHDX
0
0
0
0
nS
Address Hold Time from WE High
t
WHAX
0
0
0
0
nS
CE Hold Time from WE High
t
WHEH
0
0
0
0
nS
WE Pulse Width High
t
WHWL
30
20
20
20
nS
Duration of Word Write Operation
(1)
(x32)
t
WHQV
1
6
6
6
6
μ
S
Duration of Erase Operation (Boot)
(1)
t
WHQV
2
0.3
0.3
0.3
0.3
Sec
Duration of Erase Operation (Parameter)
(1)
t
WHQV
3
0.3
0.3
0.3
0.3
Sec
Duration of Erase Operation (Main)
(1)
t
WHQV
4
t
QVVL
t
QVPH
t
PHBR
0.6
0.6
0.6
0.6
Sec
V
PP
Hold from Valid SRD
(1)
0
0
0
0
nS
RP V
HH
Hold from Valid SRD
(1)
0
0
0
0
nS
Boot Block Lock Delay
(1)
Notes:
1. Guaranteed by design, not tested.
2. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not tested).
200
100
100
100
nS
DC Characteristics – CMOS Compatible
(T
A
= -55
°
C to +125
°
C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Sym
Conditions
+3.3V V
CC
(1)
Typical
Min
+5.0V V
CC
Standard
Min
Units
Max
Max