
Aeroflex Circuit Technology
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
3
Absolute Maximum Ratings
Parameter
Range
-55 to +125
Units
°
C
°
C
Case Operating Temperature Range
Storage Temperature Range
-65 to +150
Voltage on Any Pin with Respect to GND (except V
CC
, V
PP
, A
9
and
RP)
(1)
-2.0 to +7.0
V
Voltage on Pins A
9
or
RP with Respect to GND (except V
CC
, V
PP
, A
9
and
RP)
(1,2)
-2.0 to +13.5
V
V
PP
Program Voltage with Respect to GND during Block Erase/ and Word/Byte Write
(1,2)
-2.0 to +14.0
V
Vcc Supply Voltage with Respect to Ground
(1)
-2.0 to +7.0
V
Output Short Circuit Current
(3)
Notes:
1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot to -2.0V for periods < 20nS. Maximum DC voltage on input/output
pins is Vcc + 0.5V, which may overshoot to Vcc + 2.0V for periods < 20nS.
2. Maximum DC voltage on Vpp may overshoot to +14.0V for periods < 20nS. Maximum DC voltage on RP or A
9
may overshoot to V
CC
+ 0.5V for periods <20nS
3. Output shorted for no more than 1 second. No more than one output shorted at one time.
NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage. These are stress rating only. Operation beyond the "Oper-
ation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.
100
mA
Recommended Operating Conditions
Symbol
V
CC
Parameter
Minimum
+4.5
Maximum
+5.5
Units
V
5V Power Supply Voltage (10%)
3.3V Power Supply Voltage (±0.3V) (Consult Factory)
+3.0
+3.6
V
V
IH
Input High Voltage (3.3V & 5V V
CC
)
+2.0
V
cc
+ 0.5
+0.8
V
V
IL
Input Low Voltage (3.3V & 5V V
CC
)
-0.5
V
T
A
Operating Temperature (Military)
-55
+125
°
C
Capacitance
(f = 1MHz, T
A
= 25
°
C)
Symbol
C
AD
Parameter
Maximum
50
Units
pF
A0 – A19
Capacitance
C
OE
C
CE
OE Capacitance
50
pF
CE Capacitance
20
pF
C
RP
RP Capacitance
50
pF
C
WE
WE Capacitance
60
pF
C
WP
WP Capacitance
50
pF
C
I
/
O
I/O0 – I/O31 Capacitance
20
pF
Capacitance Guaranteed by design, but not tested.
DC Characteristics – CMOS Compatible
(T
A
= -55
°
C to +125
°
C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Sym
Conditions
+3.3V V
CC
(1)
Typical
Min
-1
+5.0V V
CC
Standard
Min
-1
Units
Max
+1
Max
+1
Input Load Current
I
IL
V
CC
= V
CC
Max., V
IN
= V
CC
or GND
μ
A
μ
A
μ
A
μ
A
Output Leakage Current
I
LO
V
CC
= V
CC
Max., V
IN
= V
CC
or GND
-10
+10
-10
+10
Vcc Standby Current
I
CCS
V
CC
= V
CC
Max., CE = RP = WP = V
CC
± 0.2V
440
600
Vcc Deep Power-Down Current
I
CCD
V
CC
= V
CC
Max., V
IN
= V
CC
or GND, RP = GND ± 0.2V
32
32
Vcc Read Current
I
CCR
V
CC
= V
CC
Max., CE = GND, f = 10MHz (5V), 5MHz (3.3V),
I
OUT
= 0 mA, Inputs = GND ± 0.2V or V
CC
± 0.2V
120
260
mA
Vcc Write Current
I
CCW
1
V
PP
= V
PPH
1
(at 5V), Word Write in Progress (x32)
120
200
mA
I
CCW
2
V
PP
= V
PPH
2
(at 12V), Word Write in Progress (x32)
100
180
mA
Vcc Erase Current
I
CCE
1
V
PP
= V
PPH
1
(at 5V),Block Erase in Progress
120
180
mA
I
CCE
2
V
PP
= V
PPH
2
(at 12V),Block Erase in Progress
100
160
mA
Vcc Erase Suspend Current
I
CCES
CE = V
IH
, Block Erase Suspend
32
48
mA
V
PP
Standby Current
I
PPS
V
PP
< V
PPH
2
60
60
μ
A